Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors

10.1063/1.2798064

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Main Authors:	Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57225
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-572252023-10-31T20:16:16Z Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2798064 Applied Physics Letters 91 15 - APPLA 2014-06-17T03:03:44Z 2014-06-17T03:03:44Z 2007 Article Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C. (2007). Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors. Applied Physics Letters 91 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2798064 00036951 http://scholarbank.nus.edu.sg/handle/10635/57225 000250140700063 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2798064
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C.
format	Article
author	Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C.
spellingShingle	Toh, E.-H. Wang, G.H. Chan, L. Samudra, G. Yeo, Y.-C. Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors
author_sort	Toh, E.-H.
title	Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors
title_short	Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors
title_full	Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors
title_fullStr	Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors
title_full_unstemmed	Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors
title_sort	reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57225
_version_	1781781367569252352

Reduction of impact-ionization threshold energies for performance enhancement of complementary impact-ionization metal-oxide-semiconductor transistors

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