Reliability of thin gate oxides irradiated under X-ray lithography conditions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Saved in:

Bibliographic Details
Main Authors:	Cho, B.J., Kim, S.J., Ang, C.H., Ling, C.H., Joo, M.S., Yeo, I.S.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Quasi-breakdown Radiation-induced leakage current (RILC) Stress-induced leakage current (SILC) Ultra-thin gate oxide X-ray lithography
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57246
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-57246
record_format	dspace
spelling	sg-nus-scholar.10635-572462024-11-14T01:24:49Z Reliability of thin gate oxides irradiated under X-ray lithography conditions Cho, B.J. Kim, S.J. Ang, C.H. Ling, C.H. Joo, M.S. Yeo, I.S. ELECTRICAL & COMPUTER ENGINEERING Quasi-breakdown Radiation-induced leakage current (RILC) Stress-induced leakage current (SILC) Ultra-thin gate oxide X-ray lithography Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 4 B 2819-2822 JAPND 2014-06-17T03:03:59Z 2014-06-17T03:03:59Z 2001-04 Article Cho, B.J.,Kim, S.J.,Ang, C.H.,Ling, C.H.,Joo, M.S.,Yeo, I.S. (2001-04). Reliability of thin gate oxides irradiated under X-ray lithography conditions. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 40 (4 B) : 2819-2822. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/57246 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Quasi-breakdown Radiation-induced leakage current (RILC) Stress-induced leakage current (SILC) Ultra-thin gate oxide X-ray lithography
spellingShingle	Quasi-breakdown Radiation-induced leakage current (RILC) Stress-induced leakage current (SILC) Ultra-thin gate oxide X-ray lithography Cho, B.J. Kim, S.J. Ang, C.H. Ling, C.H. Joo, M.S. Yeo, I.S. Reliability of thin gate oxides irradiated under X-ray lithography conditions
description	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Cho, B.J. Kim, S.J. Ang, C.H. Ling, C.H. Joo, M.S. Yeo, I.S.
format	Article
author	Cho, B.J. Kim, S.J. Ang, C.H. Ling, C.H. Joo, M.S. Yeo, I.S.
author_sort	Cho, B.J.
title	Reliability of thin gate oxides irradiated under X-ray lithography conditions
title_short	Reliability of thin gate oxides irradiated under X-ray lithography conditions
title_full	Reliability of thin gate oxides irradiated under X-ray lithography conditions
title_fullStr	Reliability of thin gate oxides irradiated under X-ray lithography conditions
title_full_unstemmed	Reliability of thin gate oxides irradiated under X-ray lithography conditions
title_sort	reliability of thin gate oxides irradiated under x-ray lithography conditions
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57246
_version_	1821195120318349312

Reliability of thin gate oxides irradiated under X-ray lithography conditions

Similar Items