Reliability of thin gate oxides irradiated under X-ray lithography conditions
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Saved in:
Main Authors: | Cho, B.J., Kim, S.J., Ang, C.H., Ling, C.H., Joo, M.S., Yeo, I.S. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/57246 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditions
by: Chong, P.F., et al.
Published: (2014) -
Investigation of quasi-breakdown mechanism through post-quasi-breakdown thermal annealing
by: Loh, W.Y., et al.
Published: (2014) -
Nonlocal hot-electron injection as the mechanism for the predominant source-side gate oxide degradation in CHE-stressed deep submicrometer n-MOSFETs
by: Ang, D.S., et al.
Published: (2014) -
Reliability modeling of ultra-thin gate oxide and high-k dielectrics for nano-scale CMOS devices
by: LOH WEI YIP
Published: (2010) -
Stress-induced leakage current in dual-gate CMOSFETS with thin nitrided gate oxides
by: HUANG JINSHENG
Published: (2010)