Reliability of thin gate oxides irradiated under X-ray lithography conditions

Reliability of thin gate oxides irradiated under X-ray lithography conditions

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Cho, B.J., Kim, S.J., Ang, C.H., Ling, C.H., Joo, M.S., Yeo, I.S.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	مقال
منشور في:	2014
الموضوعات:	Quasi-breakdown Radiation-induced leakage current (RILC) Stress-induced leakage current (SILC) Ultra-thin gate oxide X-ray lithography
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/57246
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore

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