Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

10.1063/1.3579242

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Main Authors:	Han, G., Guo, P., Yang, Y., Zhan, C., Zhou, Q., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57401
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57401
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spelling	sg-nus-scholar.10635-574012023-10-30T21:13:26Z Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate Han, G. Guo, P. Yang, Y. Zhan, C. Zhou, Q. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3579242 Applied Physics Letters 98 15 - APPLA 2014-06-17T03:05:47Z 2014-06-17T03:05:47Z 2011-04-11 Article Han, G., Guo, P., Yang, Y., Zhan, C., Zhou, Q., Yeo, Y.-C. (2011-04-11). Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate. Applied Physics Letters 98 (15) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3579242 00036951 http://scholarbank.nus.edu.sg/handle/10635/57401 000289580800068 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.3579242
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Han, G. Guo, P. Yang, Y. Zhan, C. Zhou, Q. Yeo, Y.-C.
format	Article
author	Han, G. Guo, P. Yang, Y. Zhan, C. Zhou, Q. Yeo, Y.-C.
spellingShingle	Han, G. Guo, P. Yang, Y. Zhan, C. Zhou, Q. Yeo, Y.-C. Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
author_sort	Han, G.
title	Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
title_short	Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
title_full	Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
title_fullStr	Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
title_full_unstemmed	Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
title_sort	silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57401
_version_	1781781405569646592

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

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