Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate

10.1063/1.3579242

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Bibliographic Details
Main Authors: Han, G., Guo, P., Yang, Y., Zhan, C., Zhou, Q., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57401
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/57401

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