Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate
10.1063/1.3579242
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Main Authors: | Han, G., Guo, P., Yang, Y., Zhan, C., Zhou, Q., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/57401 |
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Institution: | National University of Singapore |
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