Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate

Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate

10.1063/1.2222343

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Bibliographic Details
Main Authors: Balakumar, S., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.L., Fei, G., Lee, S.J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57442
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Institution: National University of Singapore
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Summary:10.1063/1.2222343

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