Transient phase change effect during the crystallization process in phase change memory devices

10.1063/1.3155200

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Bibliographic Details
Main Authors: Yeo, E.G., Zhao, R., Shi, L.P., Lim, K.G., Chong, T.C., Adesida, I.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57700
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-577002023-10-30T21:55:42Z Transient phase change effect during the crystallization process in phase change memory devices Yeo, E.G. Zhao, R. Shi, L.P. Lim, K.G. Chong, T.C. Adesida, I. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.3155200 Applied Physics Letters 94 24 - APPLA 2014-06-17T03:09:12Z 2014-06-17T03:09:12Z 2009 Article Yeo, E.G., Zhao, R., Shi, L.P., Lim, K.G., Chong, T.C., Adesida, I. (2009). Transient phase change effect during the crystallization process in phase change memory devices. Applied Physics Letters 94 (24) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3155200 00036951 http://scholarbank.nus.edu.sg/handle/10635/57700 000267166600084 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.3155200
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Yeo, E.G.
Zhao, R.
Shi, L.P.
Lim, K.G.
Chong, T.C.
Adesida, I.
format Article
author Yeo, E.G.
Zhao, R.
Shi, L.P.
Lim, K.G.
Chong, T.C.
Adesida, I.
spellingShingle Yeo, E.G.
Zhao, R.
Shi, L.P.
Lim, K.G.
Chong, T.C.
Adesida, I.
Transient phase change effect during the crystallization process in phase change memory devices
author_sort Yeo, E.G.
title Transient phase change effect during the crystallization process in phase change memory devices
title_short Transient phase change effect during the crystallization process in phase change memory devices
title_full Transient phase change effect during the crystallization process in phase change memory devices
title_fullStr Transient phase change effect during the crystallization process in phase change memory devices
title_full_unstemmed Transient phase change effect during the crystallization process in phase change memory devices
title_sort transient phase change effect during the crystallization process in phase change memory devices
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/57700
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