Transient phase change effect during the crystallization process in phase change memory devices

Transient phase change effect during the crystallization process in phase change memory devices

10.1063/1.3155200

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Bibliographic Details
Main Authors:	Yeo, E.G., Zhao, R., Shi, L.P., Lim, K.G., Chong, T.C., Adesida, I.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57700
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Institution:	National University of Singapore

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