Transient phase change effect during the crystallization process in phase change memory devices

• Main Authors: Yeo, E.G., Zhao, R., Shi, L.P., Lim, K.G., Chong, T.C., Adesida, I.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57700
• Institution: National University of Singapore

10.1063/1.3155200