Effect of temperature on longitudinal optical phonon-assisted exciton luminescence in heteroepitaxial GaN layer
Applied Physics Letters
Saved in:
Main Authors: | Xu, S.J., Liu, W., Li, M.F. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/62096 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Direct determination of free exciton binding energy from phonon-assisted luminescence spectra in GaN epilayers
by: Xu, S.J., et al.
Published: (2014) -
Spectral features of LO phonon sidebands in luminescence of free excitons in GaN
by: Xu, S.J., et al.
Published: (2014) -
Phonon-assisted photoluminescence in wurtzite GaN epilayer
by: Liu, W., et al.
Published: (2014) -
Phonon-assisted photoluminescence in wurtzite GaN epilayer
by: Liu, W., et al.
Published: (2014) -
GaN exciton photovoltaic spectra at room temperature
by: Liu, W., et al.
Published: (2014)