Investigation of dislocations in GaAs using cathodoluminescence in the scanning electron microscope

Investigation of dislocations in GaAs using cathodoluminescence in the scanning electron microscope

Scanning Microscopy

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Bibliographic Details
Main Authors: Pey, K.L., Phang, J.C.H., Chan, D.S.H., Balk, L.J., Jakubowicz, A., Bresse, J.F., Myhajlenko, S.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Cathodoluminescence
cathodoluminescence contrast
dislocation
GaAs
preferential etching
scanning electron microscope
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62355
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Institution: National University of Singapore
Description
Summary:Scanning Microscopy

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