SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Main Authors:	Ling, C.H., Kwok, C.Y., Prasad, K.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/62763
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-62763
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spelling	sg-nus-scholar.10635-627632015-02-03T18:21:21Z SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES. Ling, C.H. Kwok, C.Y. Prasad, K. ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 25 10 1490-1494 JAPND 2014-06-17T06:54:36Z 2014-06-17T06:54:36Z 1986-10 Article Ling, C.H.,Kwok, C.Y.,Prasad, K. (1986-10). SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 25 (10) : 1490-1494. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/62763 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Ling, C.H. Kwok, C.Y. Prasad, K.
format	Article
author	Ling, C.H. Kwok, C.Y. Prasad, K.
spellingShingle	Ling, C.H. Kwok, C.Y. Prasad, K. SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
author_sort	Ling, C.H.
title	SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_short	SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_full	SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_fullStr	SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_full_unstemmed	SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_sort	silicon nitride films prepared by plasma-enhanced chemical vapour deposition (pecvd) of sih//4/nh//3/n//2 mixtures: some physical properties.
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/62763
_version_	1681085835226644480

SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.

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