SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.

SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

محفوظ في:
التفاصيل البيبلوغرافية
المؤلفون الرئيسيون: Ling, C.H., Kwok, C.Y., Prasad, K.
مؤلفون آخرون: ELECTRICAL ENGINEERING
التنسيق: مقال
منشور في: 2014
الوصول للمادة أونلاين:http://scholarbank.nus.edu.sg/handle/10635/62763
الوسوم: إضافة وسم
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المؤسسة: National University of Singapore
id sg-nus-scholar.10635-62763
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spelling sg-nus-scholar.10635-627632024-11-08T18:01:32Z SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES. Ling, C.H. Kwok, C.Y. Prasad, K. ELECTRICAL ENGINEERING Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 25 10 1490-1494 JAPND 2014-06-17T06:54:36Z 2014-06-17T06:54:36Z 1986-10 Article Ling, C.H.,Kwok, C.Y.,Prasad, K. (1986-10). SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes 25 (10) : 1490-1494. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/62763 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Ling, C.H.
Kwok, C.Y.
Prasad, K.
format Article
author Ling, C.H.
Kwok, C.Y.
Prasad, K.
spellingShingle Ling, C.H.
Kwok, C.Y.
Prasad, K.
SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
author_sort Ling, C.H.
title SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_short SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_full SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_fullStr SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_full_unstemmed SILICON NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CHEMICAL VAPOUR DEPOSITION (PECVD) OF SiH//4/NH//3/N//2 MIXTURES: SOME PHYSICAL PROPERTIES.
title_sort silicon nitride films prepared by plasma-enhanced chemical vapour deposition (pecvd) of sih//4/nh//3/n//2 mixtures: some physical properties.
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/62763
_version_ 1821197332789592064

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