Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET

10.1109/16.817573

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Main Authors: Cheng, Zhi-Yuan, Ling, C.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62813
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-628132024-11-08T22:09:20Z Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET Cheng, Zhi-Yuan Ling, C.H. ELECTRICAL ENGINEERING 10.1109/16.817573 IEEE Transactions on Electron Devices 47 1 97-102 IETDA 2014-06-17T06:55:08Z 2014-06-17T06:55:08Z 2000-01 Article Cheng, Zhi-Yuan, Ling, C.H. (2000-01). Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET. IEEE Transactions on Electron Devices 47 (1) : 97-102. ScholarBank@NUS Repository. https://doi.org/10.1109/16.817573 00189383 http://scholarbank.nus.edu.sg/handle/10635/62813 000084717800013 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/16.817573
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Cheng, Zhi-Yuan
Ling, C.H.
format Article
author Cheng, Zhi-Yuan
Ling, C.H.
spellingShingle Cheng, Zhi-Yuan
Ling, C.H.
Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
author_sort Cheng, Zhi-Yuan
title Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_short Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_full Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_fullStr Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_full_unstemmed Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
title_sort steady state drain current technique for generation and recombination lifetime measurement in the soi mosfet
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/62813
_version_ 1821214979679846400