Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET
10.1109/16.817573
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sg-nus-scholar.10635-628132024-11-08T22:09:20Z Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET Cheng, Zhi-Yuan Ling, C.H. ELECTRICAL ENGINEERING 10.1109/16.817573 IEEE Transactions on Electron Devices 47 1 97-102 IETDA 2014-06-17T06:55:08Z 2014-06-17T06:55:08Z 2000-01 Article Cheng, Zhi-Yuan, Ling, C.H. (2000-01). Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET. IEEE Transactions on Electron Devices 47 (1) : 97-102. ScholarBank@NUS Repository. https://doi.org/10.1109/16.817573 00189383 http://scholarbank.nus.edu.sg/handle/10635/62813 000084717800013 Scopus |
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10.1109/16.817573 |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Cheng, Zhi-Yuan Ling, C.H. |
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Article |
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Cheng, Zhi-Yuan Ling, C.H. |
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Cheng, Zhi-Yuan Ling, C.H. Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET |
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Cheng, Zhi-Yuan |
title |
Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET |
title_short |
Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET |
title_full |
Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET |
title_fullStr |
Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET |
title_full_unstemmed |
Steady state drain current technique for generation and recombination lifetime measurement in the SOI MOSFET |
title_sort |
steady state drain current technique for generation and recombination lifetime measurement in the soi mosfet |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/62813 |
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