Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature anneals

Study of hot-carrier degradation in submicrometer LDD NMOSFET's from 1 f noise and charge pumping current measurements at different temperature anneals

Microelectronic Engineering

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Bibliographic Details
Main Authors: Ang, D.S., Ling, C.H., Yeow, Y.T.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/62824
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Institution: National University of Singapore
Description
Summary:Microelectronic Engineering

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