Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma

10.1116/1.1927536

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Bibliographic Details
Main Authors:	Hwang, W.S., Chen, J., Yoo, W.J., Bliznetsov, V.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/70678
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-70678
record_format	dspace
spelling	sg-nus-scholar.10635-706782023-10-30T20:15:14Z Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma Hwang, W.S. Chen, J. Yoo, W.J. Bliznetsov, V. ELECTRICAL & COMPUTER ENGINEERING 10.1116/1.1927536 Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 23 4 964-970 JVTAD 2014-06-19T03:14:56Z 2014-06-19T03:14:56Z 2005-07 Conference Paper Hwang, W.S., Chen, J., Yoo, W.J., Bliznetsov, V. (2005-07). Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 23 (4) : 964-970. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1927536 07342101 http://scholarbank.nus.edu.sg/handle/10635/70678 000230717200074 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1116/1.1927536
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Hwang, W.S. Chen, J. Yoo, W.J. Bliznetsov, V.
format	Conference or Workshop Item
author	Hwang, W.S. Chen, J. Yoo, W.J. Bliznetsov, V.
spellingShingle	Hwang, W.S. Chen, J. Yoo, W.J. Bliznetsov, V. Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
author_sort	Hwang, W.S.
title	Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
title_short	Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
title_full	Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
title_fullStr	Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
title_full_unstemmed	Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
title_sort	investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/70678
_version_	1781783174721830912

Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma

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