Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma

10.1116/1.1927536

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Bibliographic Details
Main Authors: Hwang, W.S., Chen, J., Yoo, W.J., Bliznetsov, V.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/70678
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Institution: National University of Singapore

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