Transient phase change analysis of scaling in phase change devices

Transient phase change analysis of scaling in phase change devices

10.1142/S0219581X10006946

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Bibliographic Details
Main Authors: Yeo, E.G., Shi, L., Zhao, R., Chong, C.T., Adesida, I.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
PCRAM
Phase-change memory
scaling
transient effect
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72074
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Institution: National University of Singapore
Description
Summary:10.1142/S0219581X10006946

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