Transient phase change analysis of scaling in phase change devices
10.1142/S0219581X10006946
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sg-nus-scholar.10635-720742023-10-26T09:19:46Z Transient phase change analysis of scaling in phase change devices Yeo, E.G. Shi, L. Zhao, R. Chong, C.T. Adesida, I. ELECTRICAL & COMPUTER ENGINEERING PCRAM Phase-change memory scaling transient effect 10.1142/S0219581X10006946 International Journal of Nanoscience 9 4 351-354 2014-06-19T03:31:09Z 2014-06-19T03:31:09Z 2010-08 Conference Paper Yeo, E.G., Shi, L., Zhao, R., Chong, C.T., Adesida, I. (2010-08). Transient phase change analysis of scaling in phase change devices. International Journal of Nanoscience 9 (4) : 351-354. ScholarBank@NUS Repository. https://doi.org/10.1142/S0219581X10006946 0219581X http://scholarbank.nus.edu.sg/handle/10635/72074 000216785500020 Scopus |
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PCRAM Phase-change memory scaling transient effect |
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PCRAM Phase-change memory scaling transient effect Yeo, E.G. Shi, L. Zhao, R. Chong, C.T. Adesida, I. Transient phase change analysis of scaling in phase change devices |
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10.1142/S0219581X10006946 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Yeo, E.G. Shi, L. Zhao, R. Chong, C.T. Adesida, I. |
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Conference or Workshop Item |
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Yeo, E.G. Shi, L. Zhao, R. Chong, C.T. Adesida, I. |
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Yeo, E.G. |
title |
Transient phase change analysis of scaling in phase change devices |
title_short |
Transient phase change analysis of scaling in phase change devices |
title_full |
Transient phase change analysis of scaling in phase change devices |
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Transient phase change analysis of scaling in phase change devices |
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Transient phase change analysis of scaling in phase change devices |
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transient phase change analysis of scaling in phase change devices |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/72074 |
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