Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

Applied Physics Letters

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Bibliographic Details
Main Authors:	Chong, Y.F., Pey, K.L., Wee, A.T.S., See, A., Chan, L., Lu, Y.F., Song, W.D., Chua, L.H.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80298
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-80298
record_format	dspace
spelling	sg-nus-scholar.10635-802982015-01-16T00:31:57Z Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths Chong, Y.F. Pey, K.L. Wee, A.T.S. See, A. Chan, L. Lu, Y.F. Song, W.D. Chua, L.H. ELECTRICAL ENGINEERING PHYSICS Applied Physics Letters 76 22 3197-3199 APPLA 2014-10-07T02:55:59Z 2014-10-07T02:55:59Z 2000-05-29 Article Chong, Y.F.,Pey, K.L.,Wee, A.T.S.,See, A.,Chan, L.,Lu, Y.F.,Song, W.D.,Chua, L.H. (2000-05-29). Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths. Applied Physics Letters 76 (22) : 3197-3199. ScholarBank@NUS Repository. 00036951 http://scholarbank.nus.edu.sg/handle/10635/80298 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	Applied Physics Letters
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Chong, Y.F. Pey, K.L. Wee, A.T.S. See, A. Chan, L. Lu, Y.F. Song, W.D. Chua, L.H.
format	Article
author	Chong, Y.F. Pey, K.L. Wee, A.T.S. See, A. Chan, L. Lu, Y.F. Song, W.D. Chua, L.H.
spellingShingle	Chong, Y.F. Pey, K.L. Wee, A.T.S. See, A. Chan, L. Lu, Y.F. Song, W.D. Chua, L.H. Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
author_sort	Chong, Y.F.
title	Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
title_short	Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
title_full	Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
title_fullStr	Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
title_full_unstemmed	Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
title_sort	annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/80298
_version_	1681088861130719232

Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

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