Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths

Applied Physics Letters

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Bibliographic Details
Main Authors: Chong, Y.F., Pey, K.L., Wee, A.T.S., See, A., Chan, L., Lu, Y.F., Song, W.D., Chua, L.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80298
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Institution: National University of Singapore
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