Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
Applied Physics Letters
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Main Authors: | Chong, Y.F., Pey, K.L., Wee, A.T.S., See, A., Chan, L., Lu, Y.F., Song, W.D., Chua, L.H. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80298 |
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Institution: | National University of Singapore |
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