Effect of strain in In1-x-yAlyGaxAs/In0.523Al 0.477As QW system on InP substrate
Indian Journal of Pure and Applied Physics
Saved in:
Main Authors: | Vaya, P.R., Jin, C.S., Kian, S.L. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80369 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Molecular-beam epitaxy of high quality lattice matched In1-x-yGaxAlyAs epitaxial layers on InP substrates
by: Chua, S.J., et al.
Published: (2014) -
Simulation of well-barrier hole burning in QW lasers
by: Tafti, H.A., et al.
Published: (2014) -
Simulation of well-barrier hole burning in QW lasers
by: Tafti, H.A., et al.
Published: (2014) -
477–491
by: Mulder, Neils; The
Published: (2012) -
Luminescence anomaly in band gap tailored In0.53(GaxAl1-x)0.147As quaternary alloy grown by molecular beam epitaxy
by: Ramam, A., et al.
Published: (2014)