First-principles calculations of band offsets of AlxGa1-xP-GaP(001) heterostructures
10.1088/0953-8984/9/18/005
Saved in:
Main Authors: | Chua, S.J., Zhang, X.H., Xu, S.J., Gu, X. |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80436 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
by: Zhang, X.H., et al.
Published: (2014) -
Band offsets at GaInP/AlGaInP(001) heterostructures lattice matched to GaAs
by: Zhang, X. H., et al.
Published: (2013) -
Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures
by: Tan, L.S., et al.
Published: (2014) -
Velocity-field characteristics of selectively doped GaAs/AlxGa1-xAs quantum-well heterostructures
by: Tan, L.S., et al.
Published: (2014) -
First-principles calculations of GaAs1-xPx-Al0.3Ga0.7As(001) band offsets
by: Zhang, X.H., et al.
Published: (2014)