Formation of voids in Ti-salicided BF+ 2-doped submicron polysilicon lines

Journal of Applied Physics

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Bibliographic Details
Main Authors: Chua, H.N., Pey, K.L., Lai, W.H., Siah, S.Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80447
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Institution: National University of Singapore
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Summary:Journal of Applied Physics