Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET

IEEE Transactions on Electron Devices

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Bibliographic Details
Main Authors: Cheng, Z.-Y., Ling, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80489
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Institution: National University of Singapore
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Summary:IEEE Transactions on Electron Devices