Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
IEEE Transactions on Electron Devices
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sg-nus-scholar.10635-804892023-11-01T07:38:20Z Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET Cheng, Z.-Y. Ling, C.H. ELECTRICAL & COMPUTER ENGINEERING ELECTRICAL ENGINEERING IEEE Transactions on Electron Devices 48 2 388-391 IETDA 2014-10-07T02:58:05Z 2014-10-07T02:58:05Z 2001-02 Article Cheng, Z.-Y., Ling, C.H. (2001-02). Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET. IEEE Transactions on Electron Devices 48 (2) : 388-391. ScholarBank@NUS Repository. 00189383 http://scholarbank.nus.edu.sg/handle/10635/80489 000167017400030 Scopus |
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IEEE Transactions on Electron Devices |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Cheng, Z.-Y. Ling, C.H. |
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Cheng, Z.-Y. Ling, C.H. |
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Cheng, Z.-Y. Ling, C.H. Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
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Cheng, Z.-Y. |
title |
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
title_short |
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
title_full |
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
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Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
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Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET |
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gate-channel capacitance characteristics in the fully-depleted soi mosfet |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/80489 |
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