Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET

IEEE Transactions on Electron Devices

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Main Authors: Cheng, Z.-Y., Ling, C.H.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80489
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-804892023-11-01T07:38:20Z Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET Cheng, Z.-Y. Ling, C.H. ELECTRICAL & COMPUTER ENGINEERING ELECTRICAL ENGINEERING IEEE Transactions on Electron Devices 48 2 388-391 IETDA 2014-10-07T02:58:05Z 2014-10-07T02:58:05Z 2001-02 Article Cheng, Z.-Y., Ling, C.H. (2001-02). Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET. IEEE Transactions on Electron Devices 48 (2) : 388-391. ScholarBank@NUS Repository. 00189383 http://scholarbank.nus.edu.sg/handle/10635/80489 000167017400030 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description IEEE Transactions on Electron Devices
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Cheng, Z.-Y.
Ling, C.H.
format Article
author Cheng, Z.-Y.
Ling, C.H.
spellingShingle Cheng, Z.-Y.
Ling, C.H.
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
author_sort Cheng, Z.-Y.
title Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
title_short Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
title_full Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
title_fullStr Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
title_full_unstemmed Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
title_sort gate-channel capacitance characteristics in the fully-depleted soi mosfet
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80489
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