Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
IEEE Transactions on Electron Devices
Saved in:
Main Authors: | Cheng, Z.-Y., Ling, C.H. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/80489 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Gate-channel capacitance characteristics in the fully-depleted SOI MOSFET
by: Cheng, Z.-Y., et al.
Published: (2014) -
Generation-Recombination Noise in the Near Fully Depleted SIMOX SOI n-MOSFET - Physical Characteristics and Modeling
by: Ang, D.S., et al.
Published: (2014) -
Generation-recombination noise in the near fully depleted SIMOX N-MOSFET operating in the linear region
by: Ang, D.S., et al.
Published: (2014) -
Parasitic capacitance characteristics of deep submicrometre grooved gate MOSFETs
by: Sreelal, S., et al.
Published: (2014) -
Floating-body effect in partially/dynamically/fully depleted DG/SOI MOSFETs based on unified regional modeling of surface and body potentials
by: Chiah, Siau Ben, et al.
Published: (2014)