Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity

Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity

10.1149/1.1392625

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Bibliographic Details
Main Authors: Cho, B.J., Ko, L.H., Nga, Y.A., Chan, L.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80563
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Institution: National University of Singapore
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Summary:10.1149/1.1392625

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