Impact of nitrogen implantation into polysilicon followed by drive-in process on gate oxide integrity

10.1149/1.1392625

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Bibliographic Details
Main Authors:	Cho, B.J., Ko, L.H., Nga, Y.A., Chan, L.H.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/80563
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Institution:	National University of Singapore

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