Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks

Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks

10.1109/LED.2002.807708

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Bibliographic Details
Main Authors: Hou, Y.T., Li, M.F., Yu, H.Y., Kwong, D.-L.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
(HfO2)x(Al2O3 )1-x
CMOS scaling
HfO2
High-k gate dielectric stacks
Tunneling current
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80738
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Institution: National University of Singapore
Description
Summary:10.1109/LED.2002.807708

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