Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)1-x gate stacks

• Main Authors: Hou, Y.T., Li, M.F., Yu, H.Y., Kwong, D.-L.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: (HfO2)x(Al2O3 )1-x; CMOS scaling; HfO2; High-k gate dielectric stacks; Tunneling current
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80738
• Institution: National University of Singapore

10.1109/LED.2002.807708