Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing
Proceedings of the IEEE Hong Kong Electron Devices Meeting
Saved in:
| Main Authors: | , , , , |
|---|---|
| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
|
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81384 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |
| id |
sg-nus-scholar.10635-81384 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-813842015-01-07T05:52:02Z Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. ELECTRICAL ENGINEERING MATERIALS SCIENCE Proceedings of the IEEE Hong Kong Electron Devices Meeting 82-85 252 2014-10-07T03:07:44Z 2014-10-07T03:07:44Z 1997 Conference Paper Cha, C.L.,Chor, E.F.,Gong, H.,Zhang, A.Q.,Chan, L. (1997). Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing. Proceedings of the IEEE Hong Kong Electron Devices Meeting : 82-85. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/81384 NOT_IN_WOS Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| country |
Singapore |
| collection |
ScholarBank@NUS |
| description |
Proceedings of the IEEE Hong Kong Electron Devices Meeting |
| author2 |
ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. |
| format |
Conference or Workshop Item |
| author |
Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. |
| spellingShingle |
Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing |
| author_sort |
Cha, C.L. |
| title |
Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing |
| title_short |
Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing |
| title_full |
Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing |
| title_fullStr |
Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing |
| title_full_unstemmed |
Breakdown of reoxidized nitrided oxide (ONO) in Flash memory devices upon current stressing |
| title_sort |
breakdown of reoxidized nitrided oxide (ono) in flash memory devices upon current stressing |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/81384 |
| _version_ |
1681089061427609600 |