Quantum tunneling and scalability of HfO2 and HfAlO gate stacks

Technical Digest - International Electron Devices Meeting

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Bibliographic Details
Main Authors: Hou, Y.T., Li, M.F., Yu, H.Y., Jin, Y., Kwong, D.-L.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81694
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Institution: National University of Singapore
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