Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique

Microelectronics Reliability

Saved in:

Bibliographic Details
Main Authors:	Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L., Xie, J.
Other Authors:	ELECTRICAL ENGINEERING
Format:	Review
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81820
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-81820
record_format	dspace
spelling	sg-nus-scholar.10635-818202024-11-14T00:57:44Z Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Xie, J. ELECTRICAL ENGINEERING MATERIALS SCIENCE Microelectronics Reliability 38 9 1439-1446 MCRLA 2014-10-07T03:12:23Z 2014-10-07T03:12:23Z 1998 Review Cha, C.L.,Chor, E.F.,Gong, H.,Zhang, A.Q.,Chan, L.,Xie, J. (1998). Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique. Microelectronics Reliability 38 (9) : 1439-1446. ScholarBank@NUS Repository. 00262714 http://scholarbank.nus.edu.sg/handle/10635/81820 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	Microelectronics Reliability
author2	ELECTRICAL ENGINEERING
author_facet	ELECTRICAL ENGINEERING Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Xie, J.
format	Review
author	Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Xie, J.
spellingShingle	Cha, C.L. Chor, E.F. Gong, H. Zhang, A.Q. Chan, L. Xie, J. Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique
author_sort	Cha, C.L.
title	Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique
title_short	Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique
title_full	Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique
title_fullStr	Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique
title_full_unstemmed	Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique
title_sort	evaluation of the dielectric breakdown of reoxidized nitrided oxide (ono) in flash memory devices using constant current-stressing technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81820
_version_	1821185141830057984

Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique

Similar Items