Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique
Microelectronics Reliability
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Review |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/81820 |
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| Institution: | National University of Singapore |