Evaluation of the dielectric breakdown of reoxidized nitrided oxide (ONO) in flash memory devices using constant current-stressing technique

• Main Authors: Cha, C.L., Chor, E.F., Gong, H., Zhang, A.Q., Chan, L., Xie, J.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Review
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/81820
• Institution: National University of Singapore

Microelectronics Reliability