Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium

10.1109/LED.2007.894654

Saved in:

Bibliographic Details
Main Authors:	Bai, W., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Ammonia treatment Germanium Hafnium oxide High-κ dielectric MOS Reliability Time-dependent dielectric breakdown (TDDB)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82050
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82050
record_format	dspace
spelling	sg-nus-scholar.10635-820502023-10-26T09:07:03Z Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium Bai, W. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Ammonia treatment Germanium Hafnium oxide High-κ dielectric MOS Reliability Time-dependent dielectric breakdown (TDDB) 10.1109/LED.2007.894654 IEEE Electron Device Letters 28 5 369-372 EDLED 2014-10-07T04:24:48Z 2014-10-07T04:24:48Z 2007-05 Article Bai, W., Kwong, D.-L. (2007-05). Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium. IEEE Electron Device Letters 28 (5) : 369-372. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.894654 07413106 http://scholarbank.nus.edu.sg/handle/10635/82050 000246191700013 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Ammonia treatment Germanium Hafnium oxide High-κ dielectric MOS Reliability Time-dependent dielectric breakdown (TDDB)
spellingShingle	Ammonia treatment Germanium Hafnium oxide High-κ dielectric MOS Reliability Time-dependent dielectric breakdown (TDDB) Bai, W. Kwong, D.-L. Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium
description	10.1109/LED.2007.894654
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Bai, W. Kwong, D.-L.
format	Article
author	Bai, W. Kwong, D.-L.
author_sort	Bai, W.
title	Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium
title_short	Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium
title_full	Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium
title_fullStr	Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium
title_full_unstemmed	Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium
title_sort	charge trapping and tddb characteristics of ultrathin mocvd hfo2 gate dielectric on nitrided germanium
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82050
_version_	1781784049589682176

Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium

Similar Items