Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium

Charge trapping and TDDB characteristics of ultrathin MOCVD HfO2 gate dielectric on nitrided germanium

10.1109/LED.2007.894654

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Bibliographic Details
Main Authors: Bai, W., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Ammonia treatment
Germanium
Hafnium oxide
High-κ dielectric
MOS
Reliability
Time-dependent dielectric breakdown (TDDB)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82050
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/82050

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