Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor

10.1109/LED.2008.2000611

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Bibliographic Details
Main Authors:	Toh, E.-H., Wang, G.H., Chan, L., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Impact-ionization MOS (I-MOS) Multiple gates Nanowire Silicon-carbon
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82065
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82065
record_format	dspace
spelling	sg-nus-scholar.10635-820652024-11-09T07:32:28Z Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor Toh, E.-H. Wang, G.H. Chan, L. Weeks, D. Bauer, M. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Impact-ionization MOS (I-MOS) Multiple gates Nanowire Silicon-carbon 10.1109/LED.2008.2000611 IEEE Electron Device Letters 29 7 731-733 EDLED 2014-10-07T04:24:58Z 2014-10-07T04:24:58Z 2008-07 Article Toh, E.-H., Wang, G.H., Chan, L., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C. (2008-07). Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor. IEEE Electron Device Letters 29 (7) : 731-733. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2008.2000611 07413106 http://scholarbank.nus.edu.sg/handle/10635/82065 000257626000024 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Impact-ionization MOS (I-MOS) Multiple gates Nanowire Silicon-carbon
spellingShingle	Impact-ionization MOS (I-MOS) Multiple gates Nanowire Silicon-carbon Toh, E.-H. Wang, G.H. Chan, L. Weeks, D. Bauer, M. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C. Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor
description	10.1109/LED.2008.2000611
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Toh, E.-H. Wang, G.H. Chan, L. Weeks, D. Bauer, M. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C.
format	Article
author	Toh, E.-H. Wang, G.H. Chan, L. Weeks, D. Bauer, M. Spear, J. Thomas, S.G. Samudra, G. Yeo, Y.-C.
author_sort	Toh, E.-H.
title	Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor
title_short	Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor
title_full	Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor
title_fullStr	Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor
title_full_unstemmed	Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor
title_sort	cointegration of in situ doped silicon-carbon source and silicon-carbon i-region in p-channel silicon nanowire impact-ionization transistor
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82065
_version_	1821224981437087744

Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor

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