Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor

Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistor

10.1109/LED.2008.2000611

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Bibliographic Details
Main Authors: Toh, E.-H., Wang, G.H., Chan, L., Weeks, D., Bauer, M., Spear, J., Thomas, S.G., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Impact-ionization MOS (I-MOS)
Multiple gates
Nanowire
Silicon-carbon
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82065
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Institution: National University of Singapore

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