Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation

Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation

10.1109/TED.2012.2185799

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Bibliographic Details
Main Authors: Koh, S.-M., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Contact resistance
fin width
FinFET
nickel silicide
schottky barrier
silicon-carbon (Si:C)
sulfur
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82088
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2012.2185799

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