Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
10.1109/TED.2012.2185799
Saved in:
Main Authors: | Koh, S.-M., Samudra, G.S., Yeo, Y.-C. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/82088 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
P-channel tri-gate FinFETs featuring Ni1-yPtySiGe source/drain contacts for enhanced drive current performance
by: Lee, R.T.-P., et al.
Published: (2014) -
The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
by: Lee, R.T.P., et al.
Published: (2014) -
Sulfur-induced PtSi:C/Si:C Schottky barrier height lowering for realizing N-channel FinFETs with reduced external resistance
by: Lee, R.T.-P., et al.
Published: (2014) -
Achieving conduction band-edge Schottky barrier height for arsenic-segregated nickel aluminide disilicide and implementation in FinFETs with ultra-narrow fin widths
by: Lee, R.T.-P., et al.
Published: (2014) -
Advanced source and drain contact engineering for multiple- gate transistors
by: LEE TEK PO RINUS
Published: (2010)