Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation

Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation

10.1109/TED.2012.2185799

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Bibliographic Details
Main Authors: Koh, S.-M., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Contact resistance
fin width
FinFET
nickel silicide
schottky barrier
silicon-carbon (Si:C)
sulfur
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82088
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-820882023-10-26T09:05:24Z Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation Koh, S.-M. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Contact resistance fin width FinFET nickel silicide schottky barrier silicon-carbon (Si:C) sulfur 10.1109/TED.2012.2185799 IEEE Transactions on Electron Devices 59 4 1046-1055 IETDA 2014-10-07T04:25:16Z 2014-10-07T04:25:16Z 2012-04 Article Koh, S.-M., Samudra, G.S., Yeo, Y.-C. (2012-04). Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation. IEEE Transactions on Electron Devices 59 (4) : 1046-1055. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2185799 00189383 http://scholarbank.nus.edu.sg/handle/10635/82088 000302083800024 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Contact resistance
fin width
FinFET
nickel silicide
schottky barrier
silicon-carbon (Si:C)
sulfur
spellingShingle Contact resistance
fin width
FinFET
nickel silicide
schottky barrier
silicon-carbon (Si:C)
sulfur
Koh, S.-M.
Samudra, G.S.
Yeo, Y.-C.
Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
description 10.1109/TED.2012.2185799
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Koh, S.-M.
Samudra, G.S.
Yeo, Y.-C.
format Article
author Koh, S.-M.
Samudra, G.S.
Yeo, Y.-C.
author_sort Koh, S.-M.
title Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
title_short Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
title_full Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
title_fullStr Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
title_full_unstemmed Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregation
title_sort contact technology for strained nfinfets with silicon-carbon source/drain stressors featuring sulfur implant and segregation
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/82088
_version_ 1781784057858752512

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