Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

10.1109/TED.2011.2166077

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Bibliographic Details
Main Authors: Koh, S.-M., Kong, E.Y.-J., Liu, B., Ng, C.-M., Samudra, G.S., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Contact resistance
fin field-effect transistor (FinFET)
platinum silicide (PtSi)
Schottky barrier
silicon-carbon (Si:C)
Tellurium (Te)
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82090
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Institution: National University of Singapore
Description
Summary:10.1109/TED.2011.2166077

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