Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

10.1109/TED.2011.2166077

محفوظ في:

التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Koh, S.-M., Kong, E.Y.-J., Liu, B., Ng, C.-M., Samudra, G.S., Yeo, Y.-C.
مؤلفون آخرون:	ELECTRICAL & COMPUTER ENGINEERING
التنسيق:	مقال
منشور في:	2014
الموضوعات:	Contact resistance fin field-effect transistor (FinFET) platinum silicide (PtSi) Schottky barrier silicon-carbon (Si:C) Tellurium (Te)
الوصول للمادة أونلاين:	http://scholarbank.nus.edu.sg/handle/10635/82090
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	National University of Singapore

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