Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation

• Main Authors: Koh, S.-M., Kong, E.Y.-J., Liu, B., Ng, C.-M., Samudra, G.S., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Contact resistance; fin field-effect transistor (FinFET); platinum silicide (PtSi); Schottky barrier; silicon-carbon (Si:C); Tellurium (Te)
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/82090
• Institution: National University of Singapore

10.1109/TED.2011.2166077