Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation
10.1109/TED.2011.2166077
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sg-nus-scholar.10635-820902024-11-09T07:32:19Z Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation Koh, S.-M. Kong, E.Y.-J. Liu, B. Ng, C.-M. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Contact resistance fin field-effect transistor (FinFET) platinum silicide (PtSi) Schottky barrier silicon-carbon (Si:C) Tellurium (Te) 10.1109/TED.2011.2166077 IEEE Transactions on Electron Devices 58 11 3852-3862 IETDA 2014-10-07T04:25:17Z 2014-10-07T04:25:17Z 2011-11 Article Koh, S.-M., Kong, E.Y.-J., Liu, B., Ng, C.-M., Samudra, G.S., Yeo, Y.-C. (2011-11). Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation. IEEE Transactions on Electron Devices 58 (11) : 3852-3862. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2011.2166077 00189383 http://scholarbank.nus.edu.sg/handle/10635/82090 000296099400026 Scopus |
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Contact resistance fin field-effect transistor (FinFET) platinum silicide (PtSi) Schottky barrier silicon-carbon (Si:C) Tellurium (Te) |
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Contact resistance fin field-effect transistor (FinFET) platinum silicide (PtSi) Schottky barrier silicon-carbon (Si:C) Tellurium (Te) Koh, S.-M. Kong, E.Y.-J. Liu, B. Ng, C.-M. Samudra, G.S. Yeo, Y.-C. Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation |
| description |
10.1109/TED.2011.2166077 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Koh, S.-M. Kong, E.Y.-J. Liu, B. Ng, C.-M. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Koh, S.-M. Kong, E.Y.-J. Liu, B. Ng, C.-M. Samudra, G.S. Yeo, Y.-C. |
| author_sort |
Koh, S.-M. |
| title |
Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation |
| title_short |
Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation |
| title_full |
Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation |
| title_fullStr |
Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation |
| title_full_unstemmed |
Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation |
| title_sort |
contact-resistance reduction for strained n-finfets with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregation |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82090 |
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1821189121617428480 |