Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate

Effect of surface NH 3 anneal on the physical and electrical properties of HfO 2 films on Ge substrate

10.1063/1.1737057

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Bibliographic Details
Main Authors: Wu, N., Zhang, Q., Zhu, C., Yeo, C.C., Whang, S.J., Chan, D.S.H., Li, M.F., Cho, B.J., Chin, A., Kwong, D.-L., Du, A.Y., Tung, C.H., Balasubramanian, N.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82213
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/82213

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