Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics

10.1109/TED.2008.926581

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Bibliographic Details
Main Authors:	Yang, J.-J., Wang, X.-P., Zhu, C.-X., Li, M.-F., Yu, H.-Y., Loh, W.-Y., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Chemical vapor deposited (CVD) Fermi-level pinning Flatband voltage (Vfb) HfLaO HfO2 Ni-based fully silicided (FUSI) gate Physical vapor deposited (PVD)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82294
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-82294
record_format	dspace
spelling	sg-nus-scholar.10635-822942023-10-27T07:29:30Z Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics Yang, J.-J. Wang, X.-P. Zhu, C.-X. Li, M.-F. Yu, H.-Y. Loh, W.-Y. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Chemical vapor deposited (CVD) Fermi-level pinning Flatband voltage (Vfb) HfLaO HfO2 Ni-based fully silicided (FUSI) gate Physical vapor deposited (PVD) 10.1109/TED.2008.926581 IEEE Transactions on Electron Devices 55 8 2238-2245 IETDA 2014-10-07T04:27:41Z 2014-10-07T04:27:41Z 2008 Article Yang, J.-J., Wang, X.-P., Zhu, C.-X., Li, M.-F., Yu, H.-Y., Loh, W.-Y., Kwong, D.-L. (2008). Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics. IEEE Transactions on Electron Devices 55 (8) : 2238-2245. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.926581 00189383 http://scholarbank.nus.edu.sg/handle/10635/82294 000257950300061 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Chemical vapor deposited (CVD) Fermi-level pinning Flatband voltage (Vfb) HfLaO HfO2 Ni-based fully silicided (FUSI) gate Physical vapor deposited (PVD)
spellingShingle	Chemical vapor deposited (CVD) Fermi-level pinning Flatband voltage (Vfb) HfLaO HfO2 Ni-based fully silicided (FUSI) gate Physical vapor deposited (PVD) Yang, J.-J. Wang, X.-P. Zhu, C.-X. Li, M.-F. Yu, H.-Y. Loh, W.-Y. Kwong, D.-L. Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics
description	10.1109/TED.2008.926581
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Yang, J.-J. Wang, X.-P. Zhu, C.-X. Li, M.-F. Yu, H.-Y. Loh, W.-Y. Kwong, D.-L.
format	Article
author	Yang, J.-J. Wang, X.-P. Zhu, C.-X. Li, M.-F. Yu, H.-Y. Loh, W.-Y. Kwong, D.-L.
author_sort	Yang, J.-J.
title	Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics
title_short	Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics
title_full	Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics
title_fullStr	Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics
title_full_unstemmed	Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics
title_sort	enhancement of the flatband modulation of ni-silicided gates on hf-based dielectrics
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82294
_version_	1781784102407503872

Enhancement of the flatband modulation of Ni-silicided gates on Hf-based dielectrics

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